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 NRVBB1060 SWITCHMODEt Power Rectifier
This SWITCHMODE power rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features:
Features http://onsemi.com
* * * * *
Low Forward Voltage 175C Operating Junction Temperature Low Power Loss/High Efficiency High Surge Capacity This is a Pb-Free Device
SCHOTTKY BARRIER RECTIFIER 10 AMPERES, 60 VOLTS
1 4 3
Applications
* Power Supply - Output Rectification * Power Management
Mechanical Characteristics
4 1 3 D2PAK CASE 418B STYLE 3
* * * * *
Case: Epoxy, Molded Epoxy Meets UL 94 V-0 @ 0.125 in Weight: 1.7 Grams (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260C Max. for 10 Seconds
MARKING DIAGRAM
AY WW
B1060G AKA
A Y WW B1060 G AKA
= Assembly Location = Year = Work Week = Device Code = Pb-Free Package = Diode Polarity
ORDERING INFORMATION
Device NRVBB1060T4G Package D2PAK (Pb-Free) Shipping 800/Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
(c) Semiconductor Components Industries, LLC, 2006
1
June, 2006 - Rev. 0
Publication Order Number: NRVBB1060/D
NRVBB1060
MAXIMUM RATINGS
Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR) TC = 133C Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz) TC = 133C Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz) Operating Junction Temperature (Note 1) Storage Temperature Voltage Rate of Change (Rated VR) Symbol VRRM VRWM VR IF(AV) IFRM IFSM IRRM TJ Tstg dv/dt Value 60 Unit V
10 20 150 0.5 *65 to +175 *65 to +175 10,000
A A A A C C V/ms
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction-to-Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Maximum Thermal Resistance, Junction-to-Case Maximum Thermal Resistance, Junction-to-Ambient RqJC RqJA 2.0 60 C/W C/W
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 2) (iF = 10 Amps, TC = 125C) (iF = 10 Amps, TC = 25C) (iF = 20 Amps, TC = 125C) (iF = 20 Amps, TC = 25C) Maximum Instantaneous Reverse Current (Note 2) (Rated dc Voltage, TC = 125C) (Rated dc Voltage, TC = 25C) 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%. vF 0.7 0.8 0.85 0.95 iR 25 0.10 mA V
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2
NRVBB1060
i F, INSTANTANEOUS FORWARD CURRENT (AMPS) 100 100 TJ = 150C IR , REVERSE CURRENT (mA) 10 1.0 125C 85C
10
150C 125C
85C TJ = 25C
0.1 0.01 25C
1.0
0.1
0
0.1 0.2
0.3
0.4 0.5
0.6 0.7
0.8 0.9
1.0
1.1
1.2
0.001
0
10
20
30
40
50
60
vF, INSTANTANEOUS VOLTAGE (VOLTS)
VR, REVERSE VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
Figure 2. Typical Reverse Current
IF(AV) , AVERAGE FORWARD CURRENT (AMPS)
20 18 16 14 12 10 8.0 6.0 4.0 2.0 0 110 RqJC = 2C/W 120 130 140 150 160 170 180 SQUARE WAVE dc C, CAPACITANCE (pF)
1000 900 800 700 600 500 400 300 200 100 0 0 5 10 15 20 25 30 35 40 45 50 TJ = 25C f = 1 MHz
TC, CASE TEMPERATURE (C)
VR, REVERSE VOLTAGE (V)
Figure 3. Current Derating, Case
Figure 4. Typical Capacitance
PF(AV) , AVERAGE POWER DISSIPATION (WATTS)
10 9.0 8.0 7.0 6.0 5.0 4.0
PF(AV) , AVERAGE POWER DISSIPATION (WATTS)
TJ = 85C
10 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 11 12 13 14 15 IF(AV), AVERAGE CURRENT (AMPS) IPK/IAV = 20 IPK/IAV = 5.0 IPK/IAV = 10 TJ = 150C SQUARE WAVE IPK/IAV = p dc
SQUARE WAVE IPK/IAV = p IPK/IAV = 5.0 IPK/IAV = 10 dc
3.0 IPK/IAV = 20 2.0 1.0 0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 11 12 13 14 15 IF(AV), AVERAGE CURRENT (AMPS)
Figure 5. Typical Forward Power Dissipation
Figure 6. Typical Forward Power Dissipation
http://onsemi.com
3
NRVBB1060
PACKAGE DIMENSIONS
D2PAK 3 CASE 418B-04 ISSUE J
C E -B-
4 DIM A B C D E F G H J K L M N P R S V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B-01 THRU 418B-03 OBSOLETE, NEW STANDARD 418B-04. INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.310 0.350 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.052 0.072 0.280 0.320 0.197 REF 0.079 REF 0.039 REF 0.575 0.625 0.045 0.055 MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 7.87 8.89 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 1.32 1.83 7.11 8.13 5.00 REF 2.00 REF 0.99 REF 14.60 15.88 1.14 1.40
V W
A
1 2 3
S
-T-
SEATING PLANE
K G D H
3 PL M
W J
0.13 (0.005) VARIABLE CONFIGURATION ZONE L M
TB
M
R
N U L
P L M
STYLE 3: PIN 1. ANODE 2. CATHODE 3. ANODE 4. CATHODE
M
F VIEW W-W 1
F VIEW W-W 2
F VIEW W-W 3
SOLDERING FOOTPRINT*
8.38 0.33
10.66 0.42
1.016 0.04
5.08 0.20
3.05 0.12 17.02 0.67
SCALE 3:1 mm inches
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
4
NRVBB1060
SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative
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5
NRVBB1060/D


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